Fig. 1From: Role of actin cytoskeleton in cargo delivery mediated by vertically aligned silicon nanotubesFabrication of vertically aligned SiNT arrays. a Schematics of the SiNT fabrication workflow: (1) Spin coating of HSQ resist on a flat Si wafer; (2) Performance of e-beam lithography (EBL) to write the designed ring patterns within the resist: (3) Chemical development to remove the remaining resist unexposed to EBL; (4) Performance of deep reactive ion etching (DRIE) to obtain SiNT arrays. b SEM images showing the (i) zoom-out view, (ii) zoom-in view, and (iii) cross-section after focused ion beam (FIB) miling of SiNTs. Scale bars, (i) 5 µm and (ii, iii) 500 nmBack to article page