Table 4 Performance of some high sensitivity semiconductor-based SERS substrates

GaP

Copper Phthalocyanine

N/A

7 × 10²

[51]

WSe₂

Copper Phthalocyanine

N/A

10²

[168]

GaN

Basic Fuchsin

N/A

1 × 10⁷

[169]

CdTe

4-Mercaptopyridine

1.8 × 10^–3 M

1 × 10⁴

[52]

InAs

Simulation calculation

N/A

10¹⁰–10¹¹ (THz excitation)

[170]

CdSe

4-Mercaptopyridine

10^–1 M

N/A

[171]

CdSe-TiO₂ IOS Film

Methylene Blue

7 × 10⁻⁹ M

1.46 × 10⁵

[172]

ZnO/Ag@Au

Rhodamine 6G

10⁻¹⁰ M

1.48 × 10⁹

[173]

ZnS

4-Mercaptopyridine

9 × 10⁻³ M

10³

[174]

ZnSe

4-Mercaptopyridine

10⁻³ M

2 × 10⁶

[175]

Nb₂O₅

Methyl Violet

10⁻⁸ M

2.09 × 10⁷

[176]

Ta₂O₅

Methyl Violet

9 × 10⁻⁹ M

2.2 × 10⁷

[177]

TiO₂

Rhodamine 6G

1 × 10⁻⁷ M

1.20 × 10⁶

[24]

CdS

Benzenethiol

N/A

N/A

[178]

CuO

Rhodamine 6G

1 × 10⁻⁸ M

N/A

[179]

AgFeO₂

Rhodamine 6G

1 × 10⁻⁷ M

5.1 × 10⁵

[180]

ReS₂

Copper Phthalocyanine

N/A

10

[181]

W₁₈O₄₉

Rhodamine B

1 × 10⁻⁷ M

N/A

[182]

V₂O₅

Rhodamine 6G

1 × 10⁻⁸ M

N/A

[183]

CuTe

Nile Red

N/A

10⁶

[184]

Si (H-SiNWs)

Rhodamine 6G

1 × 10⁻⁶ M

10²

[185]

Ge (H-GeNT)

Rhodamine 6G

1 × 10⁻⁶ M

10²

[185]

Cu₂O

4-Mercaptobenzoic

10^–3 M

5.36 × 10⁵

[186]

Pb₃O₄

4-Mercaptopyridine

10^–7 M

N/A

[187]

Black Phosphorus

Crystal Violet

10^–5 M

2.14 × 10⁵

[188]

Graphene

Rhodamine B

∼10^–8 M

10³

[189]

MoS₂

4-Mercaptopyridine

10^–3 M

3 × 10⁵

[190]

TaSe₂

Rhodamine 6G

10^–10 M

1.5 × 10⁵

[191]

Ti₃C₂

Rhodamine 6G

10^–11 M

3.82 × 10⁸

[192]

SnS₂

Methylene Blue

10^–13 M

3.0 × 10⁸

[120]

MoTe₂

Rhodamine 6G

4 × 10^–14 M

6.2 × 10⁹

[193]

Ti₂N

Rhodamine 6G

10^–15 M

10¹²

[194]

Re-WSe₂

Rhodamine 6G

5 × 10^–15 M

2.0 × 10⁹

[195]

WTe₂

Rhodamine 6G

4 × 10^–15 M

4.4 × 10¹⁰

[193]

Ag/BP

Rhodamine 6G

10^–20 M

1.01 × 10¹¹

[157]