Fig. 1

Memristive behavior of Pt/AlOOH/ITO device. a Two-terminal memristive device in Pt/AlOOH/ITO configuration (left) and cross-sectional SEM image of the Pt/AlOOH/ITO device (right). b Four different I-V curves of the device at different levels of Icc (1 mA, 2 mA, 4 mA and 6 mA), and each I-V curves has a different LRS/HRS ratio. c Switch voltage distributing in its 4 states, a total of 120 cycles. d Repeatability test of the HRS and LRS values of the fabricated device under four different orders of magnitude of I_CC (1 mA, 2 mA, 4 mA and 6 mA). The endurance of the device over 10³ cycles at “On” and “Off” states respectively in all four states. e The retention time of the four resistance states all exceeded 3.2 × 10³ s. A read voltage of 0.5 V was used for the measurement. f The resistance of the device over 1400 cycles under the Icc sweep of 1 mA → 2 mA → 4 mA → 6 mA → 4 mA → 2 mA → 1 mA. g The comparison of the endurance and discrete resistance levels between AlOOH and other representative RRAM implantable materials, as presented in Additional file 1: Table S1