Fig. 3
From: Flexible multilevel nonvolatile biocompatible memristor with high durability
Switching mechanism of Pt/AlOOH/ITO/PDMS device. a Typical current versus voltage (I–V) curves of the Pt/AlOOH/ITO/PDMS device in voltage sweeping mode at room temperature. A compliance current of 4 mA is used in set process. b The fitting slopes of the I-V curve for the red square area in a. c Fitting curve at the LRS portion showing Mott − Gurney behavior as the conduction mechanism. d, e The unoptimized (d) and fully optimized (e) models of AlOOH configuration respectively. f The band structure of AlOOH structure. g The formation of the pipe effect in the AlOOH material. h Schematic diagrams illustrating the proposed memristive switching mechanisms in AlOOH memristors. The reduction of O–H bond length with increasing ICC could enhance the proton migration by reducing the potential barrier, thereby raising the conductivity